CMOS Technology Integrated Terahertz Rectifier
نویسندگان
چکیده
منابع مشابه
A Fully Integrated CMOS Precision Full-Wave Rectifier
This paper presents a new fully integrated high frequency precision full-wave rectifier, which is highly suitable for CMOS technology implementation. The structure comprises a voltage-to-current converter, current rectifiers and a currentto-voltage converter. When an input voltage signal is supplied, it will be converted into two symmetrical current signals by using dual-output operational tran...
متن کاملDifferential Precision Rectifier using Single CMOS DVCC
Three novel differential precision rectifier circuits are realized using single CMOS differential voltage current conveyor. One of the realized differential precision rectifiers provides half wave voltage output. The other two circuits give full wave voltage outputs. Among the two full wave differential precision rectifiers, one circuit provides single ended voltage output while other full wave...
متن کاملTerahertz Technology
Terahertz technology applications, sensors, and sources are briefly reviewed. Emphasis is placed on the less familiar components, instruments, or subsystems. Science drivers, some historic background, and future trends are also discussed.
متن کاملFlip-chip Integrated Soi-cmos-mems Fabrication Technology
A fully-dry, flip-chip fabrication technology was developed for the integration of high fill factor, silicon-on-insulator (SOI) structures and CMOS-MEMS actuators. An SOI mirror array with a fill factor of 95% and radius of curvature >1.3 m was fabricated on CMOS-MEMS electrothermal actuators using this technology. The unloaded actuators achieved an optical scan range of >92o. Following flip-ch...
متن کاملSkybridge: 3-D Integrated Circuit Technology Alternative to CMOS
As CMOS scaling options are exhausted by fundamental limitations, device and circuit integration in the third-dimension could provide a possible pathway without extensively relying on ultra-scaled transistors. So far, however, the migration of CMOS to 3-D has been unattainable. The CMOS fabric architecture uses complementary MOSFETs in an inverted logic, where both pull-up and pull-down transis...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Proceedings
سال: 2017
ISSN: 2504-3900
DOI: 10.3390/proceedings1040344